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US 2021/0343935 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Wei Chen, Po-Kai Hsu, Yu-Ping Wang, Hung-Yueh Chen
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Abstract
A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a first inter-metal dielectric (IMD) layer on a substrate;
- forming a first metal interconnection and a second metal interconnection in the first IMD layer;
- forming a channel layer on the first metal interconnection and the second metal interconnection;
- forming a magnetic tunneling junction (MTJ) stack on the channel layer;
- and
- removing the MTJ stack to form a MTJ.
3 more elements
A semiconductor device, comprising:
- a first metal interconnection and a second metal interconnection on a substrate;
- a first inter-metal dielectric (IMD) layer around the first metal interconnection and the second metal interconnection;
- a channel layer on the first IMD layer, the first metal interconnection, and the second metal interconnection, wherein a sidewall of the channel layer comprises a curve;
- and
- a magnetic tunneling junction (MTJ) on the channel layer.
2 more elements
Dependencies are inferred from the claim text.