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OwnerYimin Guo, Rongfu Xiao +1inventors
InventorsYimin Guo, Rongfu Xiao, Jun Chen
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The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.
A perpendicular magnetic pinning element (pMPE) comprising a composite multi-stack seed layer (CMSL) provided on the surface of a substrate and comprising:
The element of claim 14, wherein said TB is an MgO layer having a thickness between 0.8 nm to 1.5 nm, and said SL is a single layer CoFeB or tri-layer CoFeB/(W or Mo)/CoFeB having a total CoFeB thickness between 1 nm-2.0 nm, wherein said W or Mo layer has a thickness between 0.1 nm-0.5 nm.
The element of claim 16, wherein said bottom-pinned pSTT-MRAM film element comprises a film stack of substrate/CMSL/[Co/(Pt, Pd or Ni)]n/Co/(Ru, Rh or Ir)/[Co/(Pt, Pd or Ni)]m/Co/(Ta, W or Mo)/CoFeB/MgO/CoFeB/(W or Mo)/CoFeB/MgO/W/Ru/Ta, with said repetition numbers n and m ranging from 2 to 6 and 1 to 4, respectively.
A method of forming a bottom-pinned pSTT-MRAM film stack comprising:
Dependencies are inferred from the claim text.