Flip Light Emitting Chip and Manufacturing Method Thereof

A flip light-emitting chip, comprising:

• a substrate;
• an extended stacking layer formed on said substrate, wherein said extended stacking layer comprises an N-type semiconductor layer formed on said substrate, an active region formed on said N-type semiconductor layer, and a P-type semiconductor layer formed on said active region;
• a reflective layer formed on said P-type semiconductor layer;
• a barrier layer, formed on said P-type semiconductor layer, covering said reflective layer;
• a bonding layer formed on said barrier layer;
• a first insulating layer formed on said bonding layer, wherein said first insulating layer has at least a first channel extended to said N-type semiconductor layer and at least a second channel extended to said barrier layer;
• an extended electrode layer, which comprises a first extended electrode portion and a second extended electrode portion, wherein said first extended electrode portion comprises at least a first extended electrode pin provided in such a manner that, when said first extended electrode portion is formed on said first insulating layer, said first extended electrode pin is formed in said first channel and electrically connected with said N-type semiconductor layer, wherein said second extended electrode portion comprises at least a second extended electrode pin provided in such a manner that, when said second extended electrode portion is formed on said first insulating layer, said second extended electrode pin is formed in said second channel and electrically connected with said barrier layer;
• and
• an electrode set, which comprises an N-type electrode and a P-type electrode, wherein said N-type electrode is electrically connected with said first extended electrode portion and said P-type electrode is electrically connected with said second extended electrode portion.

A manufacturing method of flip light-emitting chip, comprising the following steps:

• (a) forming an extended stacking layer on a substrate;
• (b) forming a reflective layer on a P-type semiconductor layer of said extended stacking layer;
• (c) forming a barrier layer on said P-type semiconductor layer through covering said reflective layer;
• (d) forming a bonding layer on said barrier layer;
• (e) forming a first insulating layer on said bonding layer, wherein said first insulating layer has at least a first channel extended to an N-type semiconductor layer of said extended stacking layer and at least a second channel extended to said barrier layer;
• (f) forming a first extended electrode pin of said first extended electrode portion in said first channel of said first insulating layer when forming a first extended electrode portion on said first insulating layer, wherein said first extended electrode pin is electrically connected with said N-type semiconductor layer, and, correspondingly, forming a second extended electrode pin of said second extended electrode portion in said second channel of said first insulating layer when forming a second extended electrode portion on said first insulating layer, wherein said second extended electrode pin is electrically connected with said barrier layer;
• and
• (g) respectively electrically connecting an N-type electrode with said first extended electrode portion and electrically connecting a P-type electrode with said second extended electrode portion.