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US 2021/0343902 A1Published application
Optoelectronic semiconductor component having a sapphire support and method for the production thereof
AssigneeOSRAM Opto Semiconductors GmbH
InventorsLutz Hoeppl, Attila Molnar
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Abstract
An optoelectronic semiconductor component may include an optoelectronic semiconductor chip, a connecting material that contains amorphous aluminum oxide, and a sapphire support. The connecting material may be directly adjacent to the sapphire support. The optoelectronic semiconductor chip may be connected to the sapphire support by means of the connecting material containing aluminum oxide.
Claims15
An optoelectronic semiconductor device comprising:
- an optoelectronic semiconductor chip;
- a connecting material comprising amorphous aluminum oxide;
- a sapphire support;
- and
- a first current spreading layer;
- wherein the connecting material is directly adjacent to the sapphire support and the optoelectronic semiconductor chip is connected to the sapphire support via the connecting material containing amorphous aluminum oxide;
- the optoelectronic semiconductor chip comprising:
- a first semiconductor layer of a first conductivity type;
- and
- a second semiconductor layer of a second conductivity type;
- which form a semiconductor layer stack;
- wherein the first semiconductor layer is arranged between the second semiconductor layer and the sapphire support;
- and
- wherein the first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer (100) and is electrically connected to the first semiconductor layer.
11 more elements
A method for producing an optoelectronic semiconductor device comprising:
- forming an optoelectronic semiconductor chip;
- forming a first current spreading layer;
- forming a connecting material comprising amorphous aluminum oxide over the optoelectronic semiconductor chip;
- and
- bringing a sapphire support in contact with the connecting material and connecting the optoelectronic semiconductor chip to the sapphire support via the connecting material;
- wherein forming the optoelectronic semiconductor chip comprises forming a first semiconductor layer of a first conductivity type over a growth substrate and forming a second semiconductor layer of a second conductivity type over the first semiconductor layer;
- and
- wherein the first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer and is electrically connected to the first semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.