Back to results
US 2021/0343901 A1Published application
Semiconductor device containing stress relaxation layer and method of making thereof
AssigneeGlo AB
InventorsSaket CHADDA, Zhen CHEN
Life of this patent
Estimating the term…
Abstract
A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.
Claims20
A structure, comprising:
- a first material layer;
- a second material layer;
- and
- a stress relaxation layer having a thickness of 0.5 nm or less located between the first material layer and the second material layer.
1 more element
A method, comprising:
- forming a first material layer;
- forming a stress relaxation layer having a thickness of 0.5 nm or less;
- and
- forming a second material layer on the stress relaxation layer.
1 more element
Dependencies are inferred from the claim text.