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AssigneeSensor Electronic Technology, Inc.
InventorsMaxim S. Shatalov, Alexander Dobrinsky
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A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.
1-20. (canceled)
A semiconductor heterostructure, comprising:
The semiconductor heterostructure of claim 21, wherein the first semiconductor layer and the third semiconductor layer are doped using a same dopant.
The semiconductor heterostructure of claim 21, wherein the third semiconductor layer includes a Distributive Bragg Reflector (DBR) structure comprising an Si-doped p-type composition.
The semiconductor heterostructure of claim 21, wherein the first semiconductor layer has a first index of refraction n1, the second semiconductor layer has a second index refraction n2, the third semiconductor layer has a third index of refraction n3, and the fourth semiconductor layer has a fourth index of refraction n4, wherein n1>n2>n3>n4.
The semiconductor heterostructure of claim 21, wherein an average band gap of the fourth semiconductor layer is greater than an energy separation of energy levels within the plurality of quantum wells and the plurality of barriers in the second semiconductor layer.
The semiconductor heterostructure of claim 21, wherein the second semiconductor layer has an average absorption to a target radiation that is similar to an average absorption of the first semiconductor layer and the third semiconductor layer.
The semiconductor heterostructure of claim 21, wherein the fourth semiconductor layer comprises a p-type superlattice including a plurality of quantum wells alternating with a plurality of barriers.
A semiconductor heterostructure, comprising:
An optoelectronic device, comprising:
Dependencies are inferred from the claim text.