Light emitting diodes with aluminum-containing layers integrated therein and associated methods

A light-emitting diode (LED) structure, comprising:

• a semiconductor template;
• a first preparation layer formed on the semiconductor template;
• a second preparation layer formed on the first preparation layer;
• at least one active quantum well (QW) layer formed over the second preparation layer;
• and
• at least one p-layer formed on the active QW layer;
• wherein the active QW layer emits light from the LED structure when activated.

A method for forming a light-emitting diode (LED) structure on a semiconductor substrate, the method comprising:

• depositing at least one prep layer on the semiconductor substrate;
• forming an active multiple quantum well (MQW) region on the at least one prep layer;
• and
• depositing a p-layer on the active MQW region;
• wherein forming the active MQW region includes
• depositing a first barrier material,
• depositing an active QW material, and
• depositing a second barrier material;
• wherein forming the active MQW region optionally includes
• depositing a bottom layer between the first barrier material and the active QW material,
• depositing an interlayer between the bottom layer and the active QW material, and
• depositing a cap layer between the active QW material and the second barrier material;
• wherein at least one of depositing the active QW material, depositing the bottom layer,
• depositing the interlayer, and depositing the cap layer includes incorporating aluminum.