Crystal structure compound, oxide sintered body, sputtering target, crystalline oxide thin film, amorphous oxide thin film, thin film transistor and electronic equipment

A crystalline oxide thin film comprising an indium element (In), a gallium element (Ga), and an aluminum element (Al), wherein

• the indium element, the gallium element, and the aluminum element are present within a composition range surrounded by points (R16), (R3), (R4), and (R17) below represented by atomic % ratios in an In—Ga—Al ternary composition diagram,
• In:Ga:Al=82:1:17 (R16),
• In:Ga:Al=90:1:9 (R3),
• In:Ga:Al=90:9:1 (R4), and
• In:Ga:Al=82:17:1 (R17).

A crystalline oxide thin film comprising an indium element (In), a gallium element (Ga), and an aluminum element (Al), wherein

• the indium element, the gallium element, and the aluminum element are present within a composition range surrounded by points (R16-1), (R3), (R4-1), and (R17-1) below represented by atomic % ratios in an In—Ga—Al ternary composition diagram,
• In:Ga:Al=80:1:19 (R16-1),
• In:Ga:Al=90:1:9 (R3),
• In:Ga:Al=90:8.5:1.5 (R4-1), and
• In:Ga:Al=80:18.5:1.5 (R17-1).

An amorphous oxide thin film comprising an indium element (In), a gallium element (Ga), and an aluminum element (Al), wherein

• the indium element, the gallium element, and the aluminum element are present within a composition range surrounded by points (R16), (R17) and (R18) below represented by atomic % ratios in an In—Ga—Al ternary composition diagram,
• In:Ga:Al=82:1:17 (R16),
• In:Ga:Al=82:17:1 (R17), and
• In:Ga:Al=66:17:17 (R18).

An amorphous oxide thin film comprising an indium element (In), a gallium element (Ga), and an aluminum element (Al), wherein

• the indium element, the gallium element, and the aluminum element are present within a composition range surrounded by points (R16-1), (R17-1) and (R18-1) below represented by atomic % ratios in an In—Ga—Al ternary composition diagram,
• In:Ga:Al=80:1:19 (R16-1),
• In:Ga:Al=80:18.5:1.5 (R17-1), and
• In:Ga:Al=62.5:18.5:19 (R18-1).

An amorphous oxide thin film comprising a composition represented by a composition formula (1) below,

• (InxGayAlz)2O3 (1)
• where:
• 0.47≤x≤0.53,
• 0.17≤y≤0.33,
• 0.17≤z≤0.33, and
• x+y+z=1.

An amorphous oxide thin film comprising a composition represented by a composition formula (2) below,

• (InxGayAlz)2O3 (2)
• where:
• 0.47≤x≤0.53,
• 0.17≤y≤0.43,
• 0.07≤z≤0.33, and
• x+y+z=1.

A thin-film transistor comprising an oxide semiconductor thin-film comprising an indium element (In), a gallium element (Ga) and an aluminum element (Al), wherein the indium element (In), the gallium element (Ga) and the aluminum element (Al) are present within a composition range surrounded by points (R1), (R2), (R3), (R4), (R5) and (R6) below represented by atomic % ratios in an In—Ga—Al ternary composition diagram,

• In:Ga:Al=45:22:33 (R1),
• In:Ga:Al=66:1:33 (R2),
• In:Ga:Al=90:1:9 (R3),
• In:Ga:Al=90:9:1 (R4),
• In:Ga:Al=54:45:1 (R5), and
• In:Ga:Al=45:45:10 (R6).