Fin field-effect transistor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on opposing sides of the fin after the surface treatment process; forming a gate dielectric over the conversion layer after forming the isolation regions; and forming a gate electrode over the fin and over the gate dielectric.
Claims20
A semiconductor device comprising:
- a fin protruding above a substrate;
- isolation regions on opposing sides of the fin;
- a gate structure over the fin;
- and
- a composite liner over the fin and under the gate structure, comprising:
- a first layer of a first semiconductor material, the first layer contacting and extending along sidewalls and an upper surface of the fin;
- and
- a second layer of a first dielectric material, the second layer being distal to the fin and disposed between the first layer and the isolation regions.
A semiconductor device comprising:
- a fin protruding above a substrate;
- isolation regions on opposing sides of the fin;
- a composite liner comprising:
- an interior layer contacting and extending continuously along sidewalls of the fin from the substrate to an upper surface of the fin distal from the substrate;
- and
- an exterior layer over the interior layer and below an upper surface of the isolation regions distal from the substrate, wherein the exterior layer is disposed between the interior layer and the isolation regions;
- a gate dielectric layer over the upper surface of the isolation regions and extending along the interior layer of the composite liner;
- and
- a gate electrode over the gate dielectric layer.
A semiconductor device comprising:
- a fin protruding above a substrate;
- isolation regions on opposing sides of the fin;
- a composite liner on the fin, comprising:
- an interior layer around and contacting a channel region in the fin, the interior layer comprising a first semiconductor material;
- and
- an exterior layer on the interior layer, the exterior layer comprising a first dielectric layer, wherein the exterior layer of the composite line is disposed between the interior layer and the isolation regions;
- a gate dielectric layer on the interior layer, wherein at least portions of the interior layer of the composite liner is between the gate dielectric layer and the fin;
- and
- a gate electrode over the gate dielectric layer.
Dependencies are inferred from the claim text.