Field-effect transistor and method for fabricating the same

A method for fabricating a field-effect transistor, comprising following steps:

• 1) providing a substrate, and depositing a stacked material layer on a surface of the substrate, wherein the stacked material layer includes at least one first material layer and at least one second material layer which are alternately stacked, the material of the first material layer is different from the material of the second material layer;
• 2) defining an active region in the stacked material layer and forming a shallow trench isolation region surrounding the active region and running through the stacked material layer;
• 3) etching the active region to form a channel region, a source region, and a drain region, wherein the source region and the drain region are respectively connected to two ends of the channel region;
• 4) corroding the structure obtained in step 3) and removing the first material layer or the second material layer in the channel region to obtain at least one nano-wire channel;
• 5) depositing at least a dielectric layer on a surface of nano-wire channel and forming a gate structure layer on a surface of the dielectric layer, wherein a top surface of the dielectric layer is higher than a top surface of the stacked material layer, and when a plurality of nano-wire channels are formed, the dielectric layers on the surfaces of adjacent nano-wire channels are not connected;
• and
• 6) respectively fabricating a gate electrode on the surface of the gate structure layer, a source electrode on the surface of the source region, and a drain electrode on the surface of the drain region to complete the fabrication of the field-effect transistor.