US 2021/0343833 A1Published application

Double-sided capacitor structure and method for forming the same

AssigneeChangxin Memory Technologies, Inc.

InventorYong LU

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Abstract

A double-sided capacitor structure and a method for forming the same are provided. The method includes: providing a base including a substrate, capacitor contacts in the substrate, a stacked structure on a surface of the substrate, and capacitor holes penetrating through the stacked structure and exposing the capacitor contacts, and the stacked structure includes sacrificial layers and supporting layers which are alternately stacked in a direction perpendicular to the substrate; forming a first electrode layer, a first dielectric layer and a second electrode layer on inner walls of the capacitor holes; filling the capacitor holes with a first conductive material to form a first conductive filling layer; completely removing several of the sacrificial layers and/or the supporting layers to remain at least two of the supporting layers; and forming a second dielectric layer and a third electrode layer that covers a surface of the second dielectric layer.

Claims12

Dependent claims

A method for forming a double-sided capacitor structure, comprising:

providing a base, wherein the base comprises a substrate, capacitor contacts in the substrate, a stacked structure on a surface of the substrate, and capacitor holes penetrating through the stacked structure and exposing the capacitor contacts, and the stacked structure comprises sacrificial layers and supporting layers which are alternately stacked in a direction perpendicular to the substrate;
forming a first electrode layer, a first dielectric layer and a second electrode layer on inner walls of the capacitor holes which are stacked in a radial direction of the capacitor holes in sequence;
filling the capacitor holes with a first conductive material to form a first conductive filling layer;
completely removing several of the sacrificial layers and/or the supporting layers from a top surface of the stacked structure to remain at least two of the supporting layers;
and
forming a second dielectric layer that covers a surface of the second electrode layer and a top surface of the first conductive filling layer, and a third electrode layer that covers a surface of the second dielectric layer, to form the double-sided capacitor structure.

3 more elements

A double-sided capacitor structure, comprising:

a base, wherein the base comprises a substrate, capacitor contacts in the substrate, a stacked structure on a surface of the substrate, and capacitor holes penetrating through the stacked structure and exposing the capacitor contacts, and the stacked structure comprises sacrificial layers and supporting layers which are alternately stacked in a direction perpendicular to the substrate, a number of the supporting layers is at least two;
a first electrode layer that covers inner walls of the capacitor holes and extends out of the stacked structure in the direction perpendicular to the substrate;
a first dielectric layer that covers a top surface and a bottom surface of the first electrode layer and a side wall surface of the first electrode layer facing the capacitor holes;
a second electrode layer that covers a top surface and a bottom surface of the first dielectric layer and a side wall surface of the first dielectric layer facing the capacitor holes;
a first conductive filling layer that is filled in a region enclosed by the second electrode layer;
a second dielectric layer that covers a surface of the second electrode layer and a surface of the first conductive filling layer;
and
a third electrode layer that covers a surface of the second dielectric layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/373,904Filed 13 Jul 2021
Priority: CN 202010123241.027 Feb 2020
Published: 4 Nov 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 1/042
Of capacitors having no potential barriers: using deposition processes to form electrode extensions
H10B 12/00
Dynamic random access memory [dram] devices
H10D 1/716
Having non-planar surfaces, e.g. formed by texturisation: having vertical extensions
H10N 97/00
Electric solid-state thin-film or thick-film devices, not otherwise provided for

Family

Application17/373,904Continuation
US 11,984,472 B2Related patent
US 2021/0343833 A1This patent

From the US filing history. Foreign family members aren’t listed.

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