Semiconductor structure and method for forming same

Abstract

A semiconductor structure and a method for forming same are provided. In some implementations, a forming method includes: providing a base; forming a first electrode layer on the base; and forming a capacitor dielectric layer with a stacked structure on the first electrode layer and a second electrode layer on the capacitor dielectric layer, the capacitor dielectric layer including a bottom high-k dielectric layer, a leakage-proof dielectric layer, and a top high-k dielectric layer that are sequentially stacked from bottom to top, wherein the bottom high-k dielectric layer and the top high-k dielectric layer have a preset total deposition thickness, and wherein a proportion of a deposition thickness of the bottom high-k dielectric layer to the preset total deposition thickness is greater than a proportion of a deposition thickness of the top high-k dielectric layer to the preset total deposition thickness. In implementations of the present disclosure, the respective proportions of the bottom high-k dielectric layer and the top high-k dielectric layer to the preset total deposition thickness are adjusted, so that effective thicknesses of the bottom high-k dielectric layer and the top high-k dielectric layer are both relatively small, thereby alleviating the crystallization problem of the bottom high-k dielectric layer and the top high-k dielectric layer, and further improving reliability of a capacitor structure.

Dependencies are inferred from the claim text.