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US 2021/0343830 A1Published application
Metal-oxide-metal capacitor from subtractive back-end-of-line scheme
AssigneeQUALCOMM Incorporated
InventorsJohn Jianhong ZHU, Ye LU, Junjing BAO
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Abstract
Certain aspects of the present disclosure generally relate to a metal-oxide-metal (MOM) capacitor formed from a subtractive back-end-of-line (BEOL) scheme. One example method of fabricating a semiconductor device generally includes forming an active layer and forming a capacitive element above the active layer with a back-end-of-line subtractive process for conductive materials.
Claims22
A method of fabricating a semiconductor device, comprising:
- forming an active layer;
- forming a capacitive element above the active layer with a back-end-of-line subtractive process for conductive materials, wherein forming the capacitive element comprises:
- forming conductive elements with a height spanning across at least a metal layer and a via layer disposed above the metal layer;
- and
- forming a first dielectric material between at least a portion of the conductive elements;
- and
- forming at least one routing metal line with the back-end-of-line subtractive process, the routing metal line being disposed above the active layer and having a height spanning across the metal layer, wherein forming the at least one routing metal line comprises removing a portion of at least one of the conductive elements within the via layer.
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A semiconductor device, comprising:
- an active layer;
- a capacitive element disposed above the active layer, wherein the capacitive element includes at least one conductive finger having a height spanning across at least a metal layer and a via layer disposed above the metal layer;
- and
- at least one routing metal line disposed adjacent to the capacitive element, wherein the at least one routing metal line is disposed in a first dielectric material, wherein the capacitive element is disposed in a second dielectric material, and wherein the first dielectric material and the second dielectric material have different dielectric constants.
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Dependencies are inferred from the claim text.