Electronic apparatus and method of manufacturing the same

An electronic apparatus comprising:

• a first transistor comprising an oxide semiconductor pattern;
• a first line spaced apart from the first transistor in a plan view;
• a second line spaced apart from the first transistor in a plan view, wherein the first line and the second line are disposed on different layers and include a different material;
• a blocking layer overlapping the oxide semiconductor pattern of the first transistor, the blocking layer and the first line being disposed on a same layer;
• and
• a bridge pattern electrically connected to the first transistor, the first line, and the second line, wherein the bridge pattern, the first line, and the second line are disposed on different layers,
• wherein the second line includes:
• a first layer including the oxide semiconductor pattern;
• and
• a second layer disposed on the first layer and including a conductive oxide.

A method for manufacturing an electronic apparatus, the method comprising:

• forming a blocking layer and a first line on a substrate;
• forming an insulation layer overlapping the blocking layer and the first line;
• forming an oxide semiconductor layer and a conductive oxide layer sequentially on the insulation layer;
• patterning the oxide semiconductor layer and the conductive oxide layer to form a first pattern, a second pattern, and a third pattern spaced apart from each other;
• removing the conductive oxide layer of each of the first pattern and the second pattern;
• heat-treating the conductive oxide layer of the third pattern to form a second line;
• and
• forming a bridge pattern electrically connecting the second line and the first line.