Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen, Wei Chen
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Abstract
A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a magnetic tunneling junction (MTJ) on a substrate;
- forming a first inter-metal dielectric (IMD) layer around the MTJ;
- forming a first metal interconnection adjacent to the MTJ;
- forming a stop layer on the first IMD layer;
- removing the stop layer to form an opening;
- and
- forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate;
- a first inter-metal dielectric (IMD) layer around the MTJ;
- a first metal interconnection adjacent to the MTJ;
- and
- a channel layer on the first IMD layer to electrically connect the MTJ and the first metal interconnection.
A semiconductor device, comprising:
- a first metal interconnection and a second metal interconnection on a substrate;
- a first inter-metal dielectric (IMD) layer around the first metal interconnection and the second metal interconnection;
- a channel layer on the first IMD layer, the first metal interconnection, and the second metal interconnection;
- and
- a magnetic tunneling junction (MTJ) on the channel layer.
Dependencies are inferred from the claim text.