US 2021/0343765 A1Published application

Image sensor

AssigneeSK hynix Inc.

InventorTae Lim Gu

Life of this patent

Estimating the term…

Loading patent…

Abstract

An image sensing device is provided to include a first photoelectric conversion element and a second photoelectric conversion element that are arranged adjacent to each other; a first isolation region located between the first and second photoelectric conversion elements and configured to receive a voltage to generate an electric field to attract photocharges from the first or second photoelectric conversion element; and a second isolation region separated from the first isolation region, the second isolation region located between the first and second photoelectric conversion elements and structured to include an insulation material to block photocharges from moving between the first and second photoelectric conversion elements.

Claims17

Dependent claims

An image sensor comprising:

a first photoelectric conversion element and a second photoelectric conversion element that are arranged adjacent to each other, each of the first photoelectric conversion element and the second photoelectric conversion element configured to generate photocharges in response to incident light;
a first isolation region located between the first photoelectric conversion element and the second photoelectric conversion element to isolate the first and second photoelectric conversion elements, and configured to receive a voltage to generate an electric field to attract photocharges from the first photoelectric conversion element or the second photoelectric conversion element so as to isolate the first and second photoelectric conversion elements from each other;
and
a second isolation region separated from the first isolation region, the second isolation region located between the first photoelectric conversion element and the second photoelectric conversion element and structured to include an insulation material to block photocharges from moving between the first and second photoelectric conversion elements.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 17/097,908Filed 13 Nov 2020
Priority: KR 10-2020-005273029 Apr 2020
Published: 4 Nov 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10F 39/8027
Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes: geometry of the photosensitive area
H10F 39/8023
Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes: disposition of the elements in pixels, e.g. smaller elements…
H10F 39/807
Constructional details of image sensors: pixel isolation structures
H10F 39/18
Image sensors: complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Family

US 12,142,618 B2Related patent
US 2021/0343765 A1This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key