Inter-digitated capacitor in flash technology
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Chen Chen, Yu-Hsiung Wang, Han-Yu Chen
Estimating the term…
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a semiconductor substrate having sidewalls that define a recess within an upper surface of the semiconductor substrate. A plurality of upper electrode segments are arranged over the semiconductor substrate and are vertically separated from the upper surface of the semiconductor substrate by a first dielectric layer. A lower electrode segment is arranged directly between the sidewalls of the semiconductor substrate and directly between adjacent ones of the plurality of upper electrode segments. A second dielectric layer is arranged directly between the sidewalls of the semiconductor substrate and the lower electrode segment and also directly between the plurality of upper electrode segments and the lower electrode segment.
An integrated chip, comprising:
An integrated chip, comprising:
An integrated chip, comprising:
Dependencies are inferred from the claim text.