Semiconductor memory device

A semiconductor memory device, comprising:

• a first chip;
• and
• a second chip,
• the first chip including
• a first semiconductor substrate having a first main surface extending in a first direction and a second direction, the second direction crossing the first direction,
• a stacked body provided on the first semiconductor substrate, the stacked body including a plurality of electrode films stacked to be separated from each other along a third direction, the third direction crossing the first direction and the second direction,
• a semiconductor member piercing the plurality of electrode films in the third direction,
• a charge storage member provided between the semiconductor member and one of the plurality of electrode films,
• a first pad, and
• a first contact connecting the one of the plurality of electrode films to the first pad, and
• the second chip including
• a second semiconductor substrate having a second main surface (upper surface) extending in the first direction and the second direction,
• a plurality of transistors formed in the second main surface,
• a second pad, and
• a second contact connecting one of a source/drain of one of the transistors to the second pad,
• wherein the first chip and the second chip face each other such that the first pad is connected to the second pad.