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US 2021/0343732 A1Published application
Ferroelectric Capacitor, A Ferroelectric Memory Cell, An Array Of Ferroelectric Memory Cells, And A Method Of Forming A Ferroelectric Capacitor
AssigneeMicron Technology, Inc.
InventorsClement Jacob, Vassil N. Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy
Life of this patent
Estimating the term…
Abstract
A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.
Claims23
A ferroelectric capacitor comprising:
- two conductive capacitor electrodes having ferroelectric material there-between, at least one of the capacitor electrodes comprising:
- MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb.
A ferroelectric memory cell comprising:
- two conductive capacitor electrodes having ferroelectric material there-between, at least one of the capacitor electrodes comprising:
- MxSiOy,where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb;
- and
- a select device electrically coupled to one of the two capacitor electrodes.
1 more element
An array of ferroelectric memory cells, the memory cells individually comprising:
- two conductive capacitor electrodes having ferroelectric material there-between, at least one of the capacitor electrodes comprising:
- MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb;
- and
- a select device electrically coupled to one of the two capacitor electrodes.
1 more element
23-38. (canceled)
Dependencies are inferred from the claim text.