Semiconductor device including insulating element and method of making

A semiconductor device comprising:

• a substrate;
• a first transistor on the substrate, wherein the first transistor comprises a gate electrode, a first source/drain electrode in the substrate;
• a second electrode in the substrate;
• an insulating layer extending into the substrate, wherein the insulating layer is between the first source/drain electrode and the second electrode, and a top surface of the insulating layer is above a top surface of the substrate;
• a word line electrically connected to gate electrode;
• a bit line electrically connected to the first source/drain electrode;
• and
• a reference voltage connected to a third electrode.

A method of making semiconductor device comprising:

• forming a first transistor, wherein forming the first transistor comprises:
• forming a gate electrode on a substrate, and
• forming a first source/drain region in the substrate;
• forming a doped region in the substrate;
• forming an insulating layer extending into the substrate, wherein the insulating layer is between the first source/drain region and the doped region, and a top surface of the insulating layer is above a top surface of the substrate;
• electrically connecting a word line electrically connected to gate electrode;
• electrically connecting a bit line electrically connected to the first source/drain region;
• and
• electrically connecting a reference voltage connected to the doped region.