Integrated Circuit Device Including a Power Supply Line and Method of Forming the Same

A method, comprising:

• providing a workpiece comprising a first fin structure and a second fin structure over a substrate, the first fin structure being parallel to the second fin structure;
• conformally depositing a first dielectric layer over the first fin structure, the second fin structure and the substrate to define a trench between the first fin structure and the second fin structure;
• forming a conductive line in the trench;
• depositing a second dielectric layer over the conductive line and the first dielectric layer;
• selectively recessing the first dielectric layer to expose a portion of the first fin structure and a portion of the second fin structure;
• forming a first epitaxial feature over the exposed portion of the first fin structure and a second epitaxial feature over the exposed portion of the second fin structure;
• depositing a third dielectric layer over the first epitaxial feature and the second epitaxial feature;
• and
• forming a source/drain contact to couple the first epitaxial feature and the conductive line.

A method, comprising:

• providing a workpiece that includes a first fin and a second fin disposed side-by-side over a substrate;
• conformally depositing a first dielectric layer over the first fin, the second fin and the substrate to define a trench between the first fin and the second fin;
• forming a power supply line in the trench;
• depositing a second dielectric layer over the power supply line and the first dielectric layer;
• selectively recessing the first dielectric layer to expose a portion of the first fin and a portion of the second fin;
• forming a source feature over the exposed portion of the first fin structure and a drain feature over the exposed portion of the second fin structure;
• forming a source contact to electrically couple the source feature to the power supply line;
• and
• forming a drain contact directly over the drain feature.