Conduction enhancement layers for electrical contact regions in power devices
AssigneeWolfspeed, Inc.
InventorsDaniel Jenner Lichtenwalner, Woongsun Kim
Life of this patent
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Abstract
Power switching devices include a semiconductor layer structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor including a gate finger that has a longitudinal axis that extends in a first direction on the semiconductor layer structure, the gate fingers spaced apart from each other along a second direction, and a gate connector having a longitudinal axis that extends in the second direction, the gate connector connected to the gate fingers of the plurality of unit cell transistors.
Claims29
A semiconductor device comprising:
- a semiconductor layer structure;
- a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor including a gate finger that has a longitudinal axis that extends in a first direction on the semiconductor layer structure, the gate fingers spaced apart from each other along a second direction;
- and
- a gate connector having a longitudinal axis that extends in the second direction, the gate connector connected to the gate fingers of the plurality of unit cell transistors.
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A semiconductor device comprising:
- a semiconductor layer structure;
- a gate pad on the semiconductor layer structure;
- and
- a gate electrode structure on the semiconductor layer structure and electrically coupled to the gate pad, wherein the gate electrode structure comprises:
- a plurality of gate fingers each comprising a first material that extends in a first direction on the semiconductor layer structure;
- and
- a gate connector comprising a second material that extends on and is connected to a gate finger of the plurality of gate fingers.
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A semiconductor device comprising:
- a semiconductor layer structure;
- a first gate electrode and a second gate electrode on the semiconductor layer structure;
- and
- a gate connector extending on and connected to the first gate electrode, extending on and connected to the second gate electrode, and extending on a portion of the semiconductor layer structure between the first gate electrode and the second gate electrode.
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Dependencies are inferred from the claim text.