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US 2021/0343701 A1Published application
Circuit that prevents device body diode conduction
AssigneeU.S. Army Combat Capabilities Development Command Army Research Laboratory
InventorDamian P. Urciuoli
Life of this patent
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Abstract
A circuit comprising a first device (e.g., a high voltage MOSFET) coupled in series with a second device (e.g., a low voltage MOSFET or HEMT). The first device comprises a body diode. Additionally, the circuit comprises a diode coupled across the pair of devices. The diode is arranged antiparallel to the first device. In one exemplary embodiment, the first device is a SiC MOSFET and the second device is a Si MOSFET or GaN HEMT.
Claims19
A circuit comprising:
- a first device having a drain, source and gate with a body-diode coupled between the drain and the source;
- a second device having a drain, source and gate;
- a diode having a cathode and anode;
- and
- where the source of the first device is connected to the source of the second device, and the cathode of the diode is connected to the drain of the first device and the anode of diode is connected to the drain of the second device, where the diode is antiparallel to the first device.
2 more elements
An integrated circuit structure comprising:
- a first chip comprising a first device having a gate, source and drain with a body-diode coupled between the source and the drain, and a diode having a cathode and anode, where a first surface of the first chip comprises the drain of the first device and a cathode of the diode and a second surface of the first chip comprises the source of the first device, the gate of the first device, and an anode of the diode;
- a second chip comprising a second device having a gate, drain and source, where a first surface of the second chip comprises the drain of the second device and the second surface comprises the source and gate of the second device;
- wherein the second chip is arranged atop the first chip to position the source of the first device upon the source of the second device;
- and
- wherein the drain of the second device is coupled to the anode of the diode.
2 more elements
An integrated circuit structure comprising:
- a first chip comprising a first device having a gate, source and drain with a body-diode coupled between the source and drain and a diode having a cathode and anode, where a first surface of the first chip comprises the drain of the first device and a cathode of the diode and a second surface of the first chip comprises the source of the first device and an anode of the diode;
- a second chip comprising a second device having a gate, drain and source, where a first surface of the second chip comprises the drain of the second device and the second surface comprises the source and gate of the second device;
- wherein the second chip is arranged atop the first chip to position the drain of the second device upon the anode of the diode;
- and
- wherein the source of the second device is coupled to the source of the first device.
2 more elements
Dependencies are inferred from the claim text.