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US 2021/0343667 A1Published application
Integrated fan-out structures and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsui-Mei CHEN, Tsung-Jen LIAO, Li-Huan CHU, Pei-Haw TSAO
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Abstract
An integrated fan-out structure on a semiconductor die, method of making the same and method of testing the semiconductor die are disclosed. The semiconductor die includes a bond pad and a hole formed in the bond pad, a passivation layer formed over a portion of the bond pad, and a protective layer formed over the hole in the bond pad.
Claims20
A semiconductor die comprising:
- a bond pad, the bond pad comprising a hole formed in the bond pad;
- a passivation layer formed over a portion of the bond pad;
- and
- a protective layer formed over the hole in the bond pad.
1 more element
A semiconductor die comprising:
- a bond pad, the bond pad comprising a hole formed in the bond pad wherein the hole is formed with a diameter in a range of 0.01-50 μm and a depth of 0.01-5 μm;
- a passivation layer formed over a portion of the bond pad;
- a protective layer formed over the hole in the bond pad;
- and
- a first seed layer formed over the hole in the bond pad, wherein a top surface of the first seed layer is contoured over the hole in the bond pad.
2 more elements
A method of making an integrated fan-out structure on a semiconductor die comprising:
- forming a bond pad on the semiconductor die;
- depositing a passivation layer over portions of the bond pad;
- and
- forming a hole in the bond pad by applying pressure with a chip probe to the bond pad.
1 more element
Dependencies are inferred from the claim text.