Back to results
US 2021/0343665 A1Published application
Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Yao Chuang, Po-Hao Tsai, Shin-Puu Jeng
Life of this patent
Estimating the term…
Abstract
A semiconductor device and manufacturing process are provided wherein a first semiconductor device is electrically connected to redistribution structures. An antenna structure is located on an opposite side of the first semiconductor device from the redistribution structures, and electrical connections separate from the first semiconductor device connect the antenna structure to the redistribution structures.
Claims20
A semiconductor device comprising:
- redistribution structures connected to external connections;
- a first semiconductor device connected to the redistribution structures;
- a first antenna substrate located on an opposite side of the first semiconductor device from the redistribution structures;
- and
- electrical connections separate from the first semiconductor device, the first semiconductor device being electrically connected to the first antenna substrate through the redistribution structures and the electrical connections.
2 more elements
A semiconductor device comprising:
- a first antenna substrate;
- conductive connections bonded to the first antenna substrate;
- a redistribution layer connected to the conductive connections;
- an encapsulant extending between the redistribution layer and the first antenna substrate;
- and
- a semiconductor die embedded within the encapsulant.
3 more elements
A semiconductor device comprising:
- an antenna substrate electrically connected to a through via;
- an encapsulant surrounding the through via;
- a semiconductor die embedded within the encapsulant;
- a redistribution structure located on an opposite side of the encapsulant from the antenna substrate;
- and
- external connections bonded to the redistribution structure.
3 more elements
Dependencies are inferred from the claim text.