Package substrate insulation opening design

A semiconductor package comprising:

• a substrate;
• a first dielectric layer over the substrate;
• a first bond pad and a second bond pad over the first dielectric layer, wherein the first bond pad has a first sidewall facing the second bond pad;
• a second dielectric layer over the first bond pad and the second bond pad;
• and
• an opening through the second dielectric layer, wherein the opening extends from the first bond pad to the second bond pad, wherein the opening comprises a first area over and exposing the first bond pad, wherein in a top view, the opening exposes a first segment of the first sidewall of the first bond pad, the first segment of the first sidewall being between a first edge of the first area and a second edge of the first area, the first edge and the second edge intersecting the first sidewall, wherein the first segment of the first sidewall is between a second segment of the first sidewall and a third segment of the first sidewall, wherein the second segment of the first sidewall is covered by the second dielectric layer.

A method of forming a semiconductor package, the method comprising:

• forming a first dielectric layer over a substrate;
• forming a first bond pad and a second bond pad over the first dielectric layer;
• forming a second dielectric layer over the first bond pad, the second bond pad, and the first dielectric layer;
• and
• forming an opening in the second dielectric layer to partially expose the first bond pad and the second bond pad, wherein the opening is formed to include:
• a first area over and partially exposing the first bond pad;
• a second area over and partially exposing the second bond pad;
• and
• a third area between the first area and the second area, the third area exposing a portion of the first dielectric layer, wherein the opening exposes a first portion of a first sidewall of the first bond pad facing the second bond pad, and a second portion of the first sidewall is covered by the second dielectric layer.