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US 2021/0343607 A1Published application
Semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorChihCheng LIU
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Abstract
A semiconductor structure includes: a substrate; an insulating region located in the substrate; a first conductor located above the insulating region and configured to collect charges; a second conductor at least partially located above the insulating region and configured to induce the charges of the first conductor; and a dielectric layer located between the first conductor and the second conductor to electrically insulate the first conductor from the second conductor.
Claims10
A semiconductor structure, comprising:
- a substrate;
- an insulating region, located in the substrate;
- a first conductor, located above the insulating region and configured to collect charges;
- a second conductor, at least partially located above the insulating region and configured to induce the charges of the first conductor;
- and
- a dielectric layer, located between the first conductor and the second conductor and configured to electrically insulate the first conductor from the second conductor.
3 more elements
Dependencies are inferred from the claim text.