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US 2021/0343598 A1Published application
Semiconductor and method of fabricating the same
AssigneeKey Foundry Co., Ltd.
InventorsYoung Bae KIM, Kwang Il KIM
Life of this patent
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Abstract
Provided are a semiconductor device, a method of manufacturing the same, and a method of forming a uniform doping concentration of each semiconductor device when manufacturing a plurality of semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable by using ion blocking patterns to provide a semiconductor device with uniform doping concentration and a higher breakdown voltage obtainable as a result of such doping.
Claims18
A semiconductor device comprising:
- an N-type deep well region and a P-type body region formed in a substrate, the N-type deep well region having a depth greater than a depth of the P-type body region;
- a gate electrode formed on substrate and overlapping the N-type deep well region and the P-type body region;
- a source region formed in the P-type body region;
- a drain region formed in the N-type deep well region and spaced apart from the gate electrode;
- an N-type body region surrounding the P-type body region and abutting the N-type deep well region;
- and
- a first dip formed between the N-type body region and the N-type deep well region,
- wherein the N-type body region has a depth less than a depth of the N-type deep well region.
5 more elements
A semiconductor device comprising:
- an N-type deep well region and a P-type body region formed in a substrate, the N-type deep well region having a depth greater than a depth of the P-type body region;
- a gate electrode formed on the substrate and overlapping the N-type deep well region and the P-type body region;
- a pick-up region and a source region respectively formed in the P-type body region;
- a drain region formed in the N-type deep well region and spaced apart from the gate electrode;
- an N-type body region surrounding the P-type body region and abutting the N-type deep well region;
- and
- an N-type well region formed in the N-type deep well region and surrounding the drain region,
- wherein the N-type body region has a depth greater than a depth of the N-type well region.
5 more elements
Dependencies are inferred from the claim text.