Moat coverage with dielectric film for device passivation and singulation
AssigneeSemiconductor Components Industries, LLC
InventorMark Anand THOMAS
Life of this patent
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Abstract
Techniques are described for the use of moats for isolating and singulating semiconductor devices formed on a wafer. Described techniques use dielectric films, such as an oxide-nitride film, to coat moat surfaces and provide passivation. The dielectric films may form a junction with a metal contact layer, to reduce electrical overstress that may otherwise occur in the resulting semiconductor devices. To ensure coverage of the moat surfaces, spray coating of a positive photoresist may be used.
Claims20
A semiconductor device assembly, comprising:
- a substrate having a semiconductor device formed therein;
- a moat portion formed in the substrate with a sidewall that is adjacent to the semiconductor device and contiguous with a surface of the substrate;
- a dielectric film covering the sidewall and a first portion of the surface;
- and
- a metal contact layer covering a second portion of the surface and at least a portion of the dielectric film covering the first portion of the surface, and providing electrical contact to the semiconductor device.
A semiconductor wafer assembly, comprising:
- a substrate having a plurality of semiconductor devices formed therein;
- at least one moat formed in the substrate and dividing the plurality of semiconductor devices into individual semiconductor devices, the at least one moat having moat sidewalls that are adjacent to at least two of the individual semiconductor devices, and a moat bottom between the sidewalls;
- and
- a dielectric film covering the moat sidewalls, the moat bottom, and a portion of a surface of the substrate on a top perimeter of the moat.
A method of manufacturing a semiconductor device, comprising:
- forming at least one moat within a substrate having a plurality of semiconductor devices formed therein, the at least one moat dividing the plurality of semiconductor devices into individual semiconductor devices, and including moat sidewalls that are adjacent to at least two of the individual semiconductor devices, and a moat bottom between the sidewalls;
- and
- forming a dielectric film covering the moat sidewalls, the moat bottom, and a portion of a surface of the substrate on both sides of the moat.
Dependencies are inferred from the claim text.