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US 2021/0343592 A1Published application
Multicolor self-aligned contact selective etch
AssigneeApplied Materials, Inc.
InventorsYung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang
Life of this patent
Estimating the term…
Abstract
Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a mask on a surface of a gate cap, a spacer material, a source cap, a drain cap, and a dielectric on a substrate, the mask having an opening exposing the surface of one or more of the gate cap, the source cap or the drain cap, the opening having a width greater than a width of one or more of the gate cap, the source cap or the drain cap, the substrate having a gate with a first side and a second side and with the gate cap thereon, the spacer material adjacent the first side and the second side of the gate, the spacer material adjacent the first side of the gate is a first spacer and the spacer material adjacent the second side of the gate is a second spacer, a source material with the source cap is on an opposite side of the spacer material adjacent the first side of the gate, a drain material with the drain cap is on an opposite side of the spacer material adjacent the second side of the gate, and the dielectric is on opposite sides of the source material from the first spacer and on opposite sides of the drain material from the second spacer;
- and
- selectively etching one or more of the gate cap, the source cap or the drain cap through the opening in the mask to expose a top of one or more of the gate, source material or drain material forming a gap,
- wherein at least one of the gate cap, the source cap or the drain cap comprises a material that is resistant to etching using the etch conditions for the selective etching.
1 more element
A method of forming a semiconductor device, the method comprising:
- forming a mask on a surface of a gate cap, a spacer material, a source cap, a drain cap and a dielectric, the mask having an opening exposing the surface of the gate cap and at least some of the surface of one or more of the source cap or drain cap, the opening having a width larger than a width of one or more of the gate cap, source cap or drain cap;
- and
- selectively etching the gate cap through the opening in the mask to expose a top of one or more of the gate and leave substantially all of the source cap and drain cap.
A method of forming a semiconductor device, the method comprising:
- forming a mask on a surface of the gate cap, a spacer material, a source cap, a drain cap and a dielectric, the mask having an opening exposing the surface of one or more of the source cap or the drain cap and at least some of the gate cap, the opening having a width larger than a width of one or more of the source cap or the drain cap and at least some of the gate cap;
- and
- selectively etching one or more of the source cap or the drain cap through the opening in the mask to expose a top of one or more of the source material or drain material and leave substantially all of the gate cap.
Dependencies are inferred from the claim text.