Contact Conductive Feature Formation and Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKen-Yu Chang, Chun-I Tsai, Ming-Hsing Tsai, Wei-Jung Lin
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Abstract
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming source/drain region and a first gate structure;
- forming one or more dielectric layers over the first gate structure and the source/drain region;
- forming an opening through the one or more dielectric layers, the opening exposing the source/drain region;
- forming a welding layer along a sidewall of an opening in the one or more dielectric layers, wherein the welding layer and the one or more dielectric layers have a first common element;
- forming a barrier layer on the welding layer, wherein the welding layer and the barrier layer have a second common element;
- etching back a portion of the welding layer and the barrier layer to expose a sidewall of the one or more dielectric layers and a sidewall of the welding layer;
- and
- forming a conductive material over the barrier layer.
A method of forming a semiconductor device, the method comprising:
- forming one or more dielectric layers over a conductive feature;
- forming an opening through the one or more dielectric layers, the opening exposing the conductive feature;
- and
- forming a contact structure extending through the opening to the conductive feature, wherein the contact structure comprises:
- a welding layer, wherein an upper surface of the welding layer is lower than an upper surface of the one or more dielectric layers;
- a barrier layer on the welding layer, wherein an upper surface of the barrier layer is lower than the upper surface of the welding layer;
- and
- a metal conductive filling material over the barrier layer, wherein the barrier layer extends between the metal conductive filling material and the conductive feature.
A semiconductor device comprising:
- a conductive feature;
- and
- a contact structure extending through a dielectric layer to the conductive feature, the contact structure comprising:
- a welding layer, wherein an upper surface of the welding layer is lower than an upper surface of the dielectric layer, wherein the welding layer and the dielectric layer have a first common element;
- a barrier layer on the welding layer, wherein an upper surface of the barrier layer is lower than the upper surface of the welding layer, wherein the welding layer and the barrier layer have a second common element;
- and
- a metal conductive filling material over the barrier layer, wherein the barrier layer completely separates the metal conductive filling material from the conductive feature.
Dependencies are inferred from the claim text.