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US 2021/0343580 A1Published application
Selective deposition method to form air gaps
AssigneeASM IP Holding B.V.
InventorChiyu Zhu
Life of this patent
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Abstract
A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
Claims20
A method of forming an air gap for a semiconductor device through selective deposition comprising:
- providing a substrate having features thereon, the features comprising a first surface for selectively depositing a film, wherein the first surface comprises a first substantially vertical portion, and a second surface, wherein the second surface comprises a second substantially vertical portion;
- and
- selectively depositing the film at least on the first substantially vertical portion of the first surface relative to the second substantially vertical portion, wherein a portion of the film at least partially defines the air gap.
Dependencies are inferred from the claim text.