Semiconductor device with buffer layer
AssigneePep Innovation Pte. Ltd.
InventorsHwee Seng Jimmy CHEW, Senthil Kumar MUNIRATHINAM
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Abstract
A wafer-level buffer layer is disclosed. The wafer-level buffer layer is configured to prevent cracking and chipping the back-end-of-line (BEOL) dielectric during wafer singulation process. The wafer-level buffer layer is a composite wafer-level buffer layer with a vibration damping agent. The vibration damping agent includes a polymer-based base layer with fillers. The damping agent absorbs or dampens the vibration of the saw blade during dicing to prevent cracking and chipping of the BEOL dielectric.
Claims20
A semiconductor package comprising:
- a die with active and inactive surfaces, wherein the active surface includes die pads on a back-end-of-line (BEOL) dielectric;
- a buffer layer disposed on the active surface of the die, wherein the buffer layer includes a vibration damping composition to prevent cracking of the BEOL dielectric from a wafer singulation process;
- via openings in the buffer layer to expose the die pads;
- and
- via contacts disposed on the via openings to provide electrical connection to the die pads.
A semiconductor package comprising:
- a die with active and inactive surfaces, wherein the active surface includes die pads on a back-end-of-line (BEOL) dielectric;
- a buffer layer disposed on the active surface of the die, wherein the buffer layer comprises a Young's Modulus and a Breaking Strength to prevent cracking of the BEOL dielectric from a wafer singulation process;
- and
- via openings in the buffer layer to expose the die pads;
- and
- via contacts disposed on the via openings to provide electrical connection to the die pads.
A method of processing a semiconductor wafer comprising:
- providing a semiconductor wafer having an active surface, wherein the active surface is processed with a plurality of dies, wherein a top die surface of the plurality of dies includes die pads on a back-end-of-line (BEOL) dielectric;
- and
- forming a buffer layer on the semiconductor wafer covering the top die surface, wherein the buffer layer includes a vibration damping composition for preventing cracking of the BEOL dielectric from a wafer singulation process.
Dependencies are inferred from the claim text.