Semiconductor device and method

A method for manufacturing an integrated circuit, the method comprising:

• forming a first layer over a substrate;
• forming a first patterned layer over the first layer, the first patterned layer having a first pattern feature and a second pattern feature;
• forming a photomask layer over the first patterned layer;
• patterning the photomask layer to form a gap therethrough, wherein the gap extends between the first pattern feature and the second pattern feature;
• forming a first material layer along sidewalls of the gap;
• forming a second material layer over the first material layer, wherein a combined thickness of the first material layer and the second material layer in the gap is greater than a height of the first pattern feature and the second pattern feature;
• removing the photomask layer;
• and
• transferring a pattern formed by the second material layer to the first layer.

A method for manufacturing an integrated circuit, the method comprising:

• forming a first patterned mask over a substrate, the first patterned mask having a first pattern feature, a second pattern feature, and a third pattern feature;
• forming a first masking layer over the first patterned mask;
• forming a second patterned mask over the first masking layer, the second patterned mask having an opening exposing a portion of the first masking layer between the first pattern feature and the second pattern feature of the first patterned mask;
• forming a first material layer along sidewalls of the opening;
• forming a second material layer over the first material layer;
• removing the second patterned mask;
• removing the first masking layer from an upper surface of the first pattern feature and the second pattern feature, wherein remaining portions of the first masking layer remains along sidewalls of the first pattern feature and the second pattern feature;
• removing the first pattern feature and the second pattern feature;
• and
• etching the substrate using at least the second material layer, remaining portions of the first masking layer, and the third pattern feature as part of a mask.