US 2021/0343526 A1Published application

Active device substrate

AssigneeAu Optronics Corporation

InventorsJia-Hong Ye, Ching-Liang Huang

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Abstract

A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

Claims15

Dependent claims

An active device substrate, comprising

a substrate having an active region and a peripheral region;
a first insulation layer located on the substrate;
a second insulation layer located on the first insulation layer;
a first active device located on the active region, wherein the first active device comprises a first crystallized metal oxide layer;
a second active device located on the peripheral region, wherein the second active device comprises a second crystallized metal oxide layer, and the first crystallized metal oxide layer and the second crystallized metal oxide layer are both in contact with the first insulation layer;
and
a third active device located on the peripheral region and electrically connected to the second active device, wherein the third active device comprises a P-type doped silicon semiconductor layer, and the second insulation layer is located between the P-type doped silicon semiconductor layer and the first insulation layer.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/375,012Filed 14 Jul 2021
Priority: TW 10711105229 Mar 2018
Published: 4 Nov 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification25 codes

H10P 14/3434
Characterised by the chemical composition: being oxide semiconductor materials
C23C 28/046
Only coatings of inorganic non-metallic material: with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being…
H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
H10D 86/0229
Comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials: characterised by control of the annealing or…

Family

Application16/368,891Division · filed 29 Mar 2019
Application17/375,012Division
US 11,094,540 B2Related patent
US 2019/0304779 A1Published application
US 2021/0343526 A1This patent

From the US filing history. Foreign family members aren’t listed.

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