Plasma processing apparatus and plasma processing method
AssigneesTokyo Electron Limited, Tohoku University
InventorMasaki HIRAYAMA
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AssigneesTokyo Electron Limited, Tohoku University
InventorMasaki HIRAYAMA
Estimating the term…
A plasma-processing apparatus includes a processing container, a stage provided within the processing container, an upper electrode provided above a front surface of the stage, with a space within the processing container interposed therebetween, a waveguide configured to introduce radio-frequency waves in a VHF/UHF band into the space, and a conductive part extending between the outer peripheral portion of the stage and a side wall of the processing container. The stage includes a metal layer. Its outer peripheral portion includes a part of the metal layer. The waveguide includes an end portion from which radio-frequency waves are emitted. The end portion is disposed to face the space. The side wall is grounded. The conductive part is electrically connected to the metal layer and the side wall while extending from the outer peripheral portion toward the side wall so that the radio-frequency waves are introduced into the space.
1-8. (canceled)
A plasma processing apparatus comprising:
A plasma processing method for performing plasma processing on a workpiece using a plasma processing apparatus, wherein an upper electrode, a waveguide, and a stage are provided in a processing container of the plasma processing apparatus, the plasma processing method comprising:
Dependencies are inferred from the claim text.