Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device

A nonvolatile memory device comprising:

• a memory cell region including memory cells and first metal pads;
• and
• a peripheral region comprising:
• second metal pads;
• a row decoder connected with the memory cells through word lines, and configured to apply a program voltage to a word line selected from the word lines in a program interval of each of program loops of a program operation and to apply verification voltages to the selected word line in a verify interval of each of the program loops;
• a page buffer connected with the memory cells through bit lines, and configured to apply voltages to the bit lines in a bit line setup interval of each of the program loops of the program operation;
• and
• control logic configured to control the row decoder and the page buffer in response to a program command such that the program operation is initiated,
• wherein, in the program interval of each of the program loops, the row decoder increases a level of the program voltage applied to the selected word line as much as a first voltage,
• wherein the control logic controls the row decoder and the page buffer to suspend the program operation in response to a suspend command and to resume the suspended program operation in response to a resume command,
• wherein a difference between a level of the program voltage finally applied to the selected word line before the program operation is suspended and a level of the program voltage applied first to the selected word line after the suspended program operation is resumed corresponds to a second voltage different from the first voltage,
• wherein the peripheral region is vertically connected to the memory cell region by the first metal pads and the second metal pads.

A storage device comprising:

• a nonvolatile memory device including memory cells;
• and
• a controller configured to transmit a write command associated with memory cells selected from the memory cells to the nonvolatile memory device, to transmit a suspend command for suspending the write command to the nonvolatile memory device before a program operation is completed, and to transmit a resume command for resuming the write command to the nonvolatile memory device,
• wherein, in response to the write command, the nonvolatile memory device is configured to apply a program voltage to the selected memory cells repeatedly while increasing the program voltage as much as a first increment,
• wherein the controller transmits information about a second increment of the program voltage to be applied to the selected memory cells to the nonvolatile memory device together with the resume command, and
• wherein the nonvolatile memory device increases the program voltage as much as the second increment in response to the resume command.