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US 2021/0343344 A1Published application
Memory Device and Programming Method Thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHongtao Liu, Ying Huang, Wenzhe Wei, Song Min Jiang, Dejia Huang, Wen Qiang Chen
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Abstract
A programming method for a memory device is disclosed. The programming method comprises moving a plurality of first charge carriers at a shallow energy level to a channel in a substrate layer before a fine programming operation for a first word line, wherein the plurality of first charge carriers at the shallow energy level correspond to a memory cell to be programmed.
Claims20
A programming method for a memory device, the programming method comprising:
- moving a plurality of first charge carriers at a shallow energy level to a channel in a substrate layer before a fine programming operation for a first word line, wherein the plurality of first charge carriers at the shallow energy level correspond to a memory cell to be programmed.
A memory device, comprising:
- a plurality of memory cells;
- a voltage generation circuit, configured to generate a plurality of voltages applied to at least the plurality of memory cells according to a plurality of control signals;
- and
- a control circuit, configured to generate the plurality of control signals to the voltage generation circuit according to a programming method, wherein the programming method comprises:
- moving a plurality of first charge carriers at a shallow energy level to a channel in a substrate layer before a fine programming operation for a first word line, wherein the plurality of first charge carriers at the shallow energy level correspond to a memory cell to be programmed.
2 more elements
Dependencies are inferred from the claim text.