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US 2021/0341844 A1Published application
Lithography method for positive tone development
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hui WENG, Chen-Yu LIU, Cheng-Han WU, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.
Claims20
A method comprising:
- illuminating radiation to a resist layer over a substrate to pattern the resist layer;
- developing the patterned resist layer using a positive tone developer;
- and
- rinsing the patterned resist layer by using a basic aqueous rinse solution, wherein a pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.
1 more element
A method comprising:
- forming a resist layer over a substrate;
- exposing the resist layer to radiation;
- providing a basic aqueous wetting solution to the resist layer after exposing the resist layer to radiation;
- and
- developing the resist layer by using a developer after providing the basic aqueous wetting solution to the resist layer, wherein a pH value of the basic aqueous wetting solution is different from a pH value of the developer.
2 more elements
A method comprising:
- illuminating a patterned EUV radiation to a resist layer over a substrate;
- developing the resist layer with a developer, wherein the developer comprises a first basic aqueous solution and a second basic aqueous solution having a pH value lower than the first basic aqueous solution, and a base concentration of the second basic aqueous solution is lower than a base concentration of the first basic aqueous solution;
- and
- rinsing the resist layer.
1 more element
Dependencies are inferred from the claim text.