Resin, photoresist composition, and method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSiao-Shan WANG, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a photoresist layer comprising a photoresist composition over a substrate;
- selectively exposing the photoresist layer to actinic radiation to form a latent pattern;
- and
- developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist,
- wherein the photoresist composition comprises:
- a photoactive compound;
- and
- a resin comprising a radical-active functional group and an acid labile group.
A photoresist composition, comprising:
- a photoactive compound;
- and
- a resin comprising a radical-active functional group and an acid labile group.
A resin, comprising monomer units having a radical-active functional group and an acid labile group, wherein the radical-active functional group is an alkene group or an alkyne group.
Dependencies are inferred from the claim text.