Crystal pulling system and methods for producing monocrystalline ingots with reduced edge band defects

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material, the system comprising:

• a crucible for containing the melt of semiconductor or solar-grade material;
• a pulling mechanism configured to pull the ingot from the melt along a pull axis;
• and
• a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism, wherein the heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system, wherein the plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.