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US 2021/0340668 A1Published application
Method for conditioning a plasma processing chamber
AssigneeLam Research Corporation
InventorsChiara Helena Catherina Giammanco MACPHERSON, Eric PAPE
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Abstract
A method for conditioning a plasma processing chamber including a chuck is provided. The method comprises a plurality of cycles, wherein each cycle comprises cleaning an interior of the plasma processing chamber and the chuck and forming a silicon oxide based coating on the interior of the plasma processing chamber and the chuck. The silicon oxide based coating has a first layer and a second layer.
Claims17
A method for conditioning a plasma processing chamber including a chuck, the method comprising a plurality of cycles, wherein each cycle comprises:
- cleaning an interior of the plasma processing chamber and the chuck;
- and
- forming a silicon oxide based coating on the interior of the plasma processing chamber and the chuck, the silicon oxide based coating having a first layer and a second layer.
Dependencies are inferred from the claim text.