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US 2021/0334444 A1Published application
Method and computing device for manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSooyong LEE, Jeeyong LEE, Jaeho JEONG
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Abstract
Disclosed is a method for fabricating of a semiconductor device. The method includes receiving a first layout including patterns for the fabrication of the semiconductor device, performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout to generate a second layout, and performing optical proximity correction (OPC) on the second layout to generate a third layout.
Claims20
A method for fabricating of a semiconductor device, the method comprising:
- receiving a first layout including patterns for the fabrication of the semiconductor device;
- performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout to generate a second layout;
- and
- performing optical proximity correction (OPC) on the second layout to generate a third layout.
1 more element
A method for fabricating of a semiconductor device comprising:
- receiving an image of a first layout including patterns for the manufacturing of the semiconductor device;
- dividing the image of the first layout to generate grids;
- extracting features of the grids;
- and
- performing a machine learning-based inference on the features to generate an image associated with an after cleaning inspection (ACI).
2 more elements
A computing device comprising:
- processors, wherein at least one processor of the processors is configured to execute machine readable instructions that, when executed by the at least one processor, cause the computing device to perform generation of a layout for manufacturing of a semiconductor device,
- wherein the generation of the layout for the manufacturing of the semiconductor device includes,
- receiving a first layout including patterns for the manufacturing of the semiconductor device,
- performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout to generate a second layout, and
- performing optical proximity correction (OPC) on the second layout to generate the layout.
2 more elements
Dependencies are inferred from the claim text.