Memory device and method reading data
AssigneeSamsung Electronics Co., Ltd.
InventorsSUNGHYE CHO, KIJUN LEE, SUNG-RAE KIM, CHANKI KIM, YEONGGEOL SONG, YESIN RYU, JAEYOUN YOUN, MYUNGKYU LEE
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AssigneeSamsung Electronics Co., Ltd.
InventorsSUNGHYE CHO, KIJUN LEE, SUNG-RAE KIM, CHANKI KIM, YEONGGEOL SONG, YESIN RYU, JAEYOUN YOUN, MYUNGKYU LEE
Estimating the term…
A method for reading data from a memory includes; reading a codeword from the memory cells, correcting the errors when a number of errors in the codeword is less than a maximum number of correctable errors, correcting the errors when the number of errors in the codeword is equal to the maximum number of correctable errors and the errors correspond to a same sub-word line, and outputting signal indicating that the errors are an uncorrectable error when the number of errors of the codeword is equal to the maximum number of correctable errors and the errors correspond to different sub-word lines.
A memory device comprising:
A memory device comprising:
A method for reading data from a memory device including memory cells, the method comprising:
Dependencies are inferred from the claim text.