Euv exposure apparatus, and overlay correction method and semiconductor device fabricating method using the same

An extreme ultraviolet (EUV) exposure apparatus comprising:

• a EUV light source configured to emit EUV light;
• a first optical system configured to transmit the EUV light from the EUV light source to a EUV mask;
• a mask stage configured to orient the EUV mask;
• a second optical system configured to transmit the EUV light reflected from the EUV mask to a wafer stage;
• and
• a control unit configured to control the mask stage and the wafer stage, and to, based on a correlation between a first overlay parameter and a second overlay parameter, correct the first overlay parameter by correcting the second overlay parameter,
• wherein the first overlay parameter is a parameter associated with overlay errors between layers on a wafer on the wafer stage, and the second overlay parameter is another parameter associated with the overlay errors between the layers on the wafer, and
• wherein the correcting the second overlay parameter includes rotating the mask stage.