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AssigneeMacDermid Enthone Inc.
InventorsJohn Commander, Kyle Whitten, Vincent Paneccasio, JR., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
Estimating the term…
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
A composition for the electrolytic deposition of cobalt comprising:
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A method for electroplating a cobalt deposit onto a semiconductor base structure, wherein the semiconductor base structure comprises a metallizing substrate comprising submicron-sized electrical interconnect features, the method comprising the steps of
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A composition for the electrolytic deposition of cobalt comprising:
Dependencies are inferred from the claim text.