Rf switch device

An RF switch device, comprising:

• a first active area including a source region having a second conductivity type and a drain region having the second conductivity type spaced apart from the source region in a first direction;
• a pair of extended areas of which respective first ends are adjacent to opposite ends of the first active area in a second direction;
• a pair of second active areas adjacent to respective second ends of the pair of extended areas, the second active areas each including a body contact region;
• H-shaped gate electrode including a first electrode in the first active area, the first electrode having a length in the second direction, and second electrodes, each in respective ones of the pair of the extended areas and respectively connected to opposite ends of the first electrode, the pair of second electrodes having a length in the first direction, and
• isolation regions below the second electrodes, in a semiconductor layer in the extended areas.

An RF switch device, comprising:

• a first active area including a source region a having second conductivity type and a drain region having the second conductivity type spaced apart from the source region in a first direction;
• a pair of extended areas of which respective first ends are adjacent to opposite ends of the first active area in a second direction:
• a pair of second active areas adjacent to second ends of the pair of the extended areas, the second active areas each including a body contact region;
• and
• an H-shaped gate electrode including a first electrode in the first active area, the first electrode having a length in the second direction, and second electrodes connected to respective opposite ends of the first electrode, wherein each of the second electrodes is in a respective one of the pair of the extended areas and has a length in the first direction,
• wherein the extended areas comprise multiple isolation regions in a semiconductor layer below the second electrodes, spaced apart from each other in the first direction, and
• the isolation regions have ends thereof facing each other in the second direction that are at least partially in the first active area, and that do not overlap in the first direction with the first electrode in the first active area.

An RF switch device comprising a first active area having a channel region;

• a pair of extended areas having respective first ends adjacent to opposite ends of the first active area in a second direction;
• a pair of second active areas adjacent to respective second ends of the pair of the extended areas;
• a body region connected to the second active areas through the extended areas;
• a buried oxide (BOX) layer on a semiconductor substrate;
• a semiconductor layer on the BOX layer;
• an H-shaped gate electrode including a first electrode in the first active area, the first electrode having a length in the second direction, and second electrodes in the pair of extended areas, connected to the first electrode and having a length in a first direction;
• the body region, in the semiconductor layer in the first active area and having a first conductivity type;
• a source region and a drain region in the semiconductor layer, having a second conductivity type and spaced apart from each other by a predetermined distance;
• and
• multiple isolation regions in the extended areas, below the second electrodes and in the semiconductor layer, spaced apart from each other.