Semiconductor Device and Method

A device comprising:

• a first reflective structure (108) comprising first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant;
• a second reflective structure (112) comprising second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant;
• an emitting semiconductor (110) region disposed between the first reflective structure (108) and the second reflective structure (112);
• a contact pad (114) on the second reflective structure (112), a work function of the contact pad (114) being less than a work function of the second reflective structure (112);
• a bonding layer (126) on the contact pad (114), a work function of the bonding layer (126) being greater than the work function of the second reflective structure (112);
• a conductive connector (210) on the bonding layer (126);
• an interconnect structure (200) comprising a first pad (208) and a second pad (208), the first pad (208) being connected to the conductive connector (210);
• a conductive via (316) connected to the second pad (208);
• an isolation material (306) surrounding the conductive via (316), the first reflective structure (108), and the second reflective structure (112);
• and
• an electrode (320) on the isolation material (306), the electrode (320) connecting the conductive via (316) to the first reflective structure (108).