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US 2021/0280990 A1Published application
Structure for radio frequency applications
AssigneeSoitec
InventorsEric Desbonnets, Bernard Aspar
Life of this patent
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Abstract
A structure for radiofrequency applications includes a high-resistivity support substrate having a front face defining a main plane, a charge-trapping layer disposed on the front face of the support substrate, a first dielectric layer disposed on the charge-trapping layer, an active layer disposed on the first dielectric layer, at least one buried electrode disposed above or in the charge-trapping layer. The buried electrode comprises a conductive layer and a second dielectric layer.
Claims20
A method of fabricating a structure for RF applications, comprising:
- providing a donor substrate comprising an active layer;
- providing a support substrate having a front surface defining a main plane of a coordinate system;
- arranging each of the following layers, respectively, on at least one of the donor substrate or the support substrate:
- a charge-trapping layer;
- a first dielectric layer;
- and
- an electrode layer;
- bonding together the donor substrate and the support substrate by molecular adhesion;
- and
- removing a portion of the donor substrate so as to add the active layer to the support substrate with the electrode layer, the first dielectric layer, and the change-trapping layer disposed between the active layer and the support substrate.
7 more elements
Dependencies are inferred from the claim text.