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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Heng Liao, Harry-Hak-Lay Chuang, Chang-Jen Hsieh, Hung Cho Wang
Estimating the term…
A memory cell with dual sidewall spacers and its manufacturing methods are provided. In some embodiments, the memory cell includes a bottom electrode disposed over a substrate, a resistance switching dielectric disposed over the bottom electrode and having a variable resistance, and a top electrode disposed over the resistance switching dielectric. The memory cell further includes a first sidewall spacer disposed on an upper surface of the bottom electrode and extending upwardly alongside the resistance switching dielectric and the top electrode. The memory cell further includes a second sidewall spacer having a bottom surface disposed on the upper surface of the bottom electrode and directly and conformally lining the first sidewall spacer.
A memory cell, comprising:
An integrated circuit comprising a memory cell, the memory cell comprising:
An integrated circuit, comprising:
Dependencies are inferred from the claim text.